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Typical Characteristics T J = 25 °C unless otherwise noted
10
5000
8
I D = 5.9 A
V DD = 25 V
V DD = 50 V
V DD = 75 V
1000
C iss
6
C oss
4
2
100
f = 1 MHz
V GS = 0 V
C rss
0
0
5
10
15
20
25
10
0.1
1
10
100
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10
8
6
35
28
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
4
T J = 25 o C
21
V GS = 10 V
3
R θ JC = 1.75 C/W
2
T J = 125 o C
T J = 100 o C
14
7
o
1
0.01
0.1
1
10
100
0
25
50
75
100
125
150
T C , CASE TEMPERATURE ( C )
10
100
t AV , TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
o
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
5
10
4
V GS = 10 V
10
10
THIS AREA IS
LIMITED BY r DS(on)
100 us
3
SINGLE PULSE
R θ JC = 1.75 o C/W
T C = 25 o C
R θ JC = 1.75 C/W
10
1
SINGLE PULSE
T J = MAX RATED
o
T C = 25 o C
1 ms
10 ms
DC
2
10
10
10
10
10
10
0.1
0.1
1
10
100
300
10
-6
-5
-4
-3
-2
-1
1
V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
?2009 Fairchild Semiconductor Corporation
FDB3860 Rev . C
4
www.fairchildsemi.com
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